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| ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * Motor drive * LCD backlighting ORDERING INFORMATION DEVICE REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 2,500 PINOUT ZXMC4A16DN8TA ZXMC4A16DN8TC DEVICE MARKING * ZXMC 4A16 TOP VIEW ISSUE 1 - NOVEMBER 2004 1 SEMICONDUCTORS ZXMC4A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (V GS = 10V; T A =25C) (b)(d) (V GS = 10V; T A =70C) (b)(d) (V GS = 10V; T A =25C) (a)(d) Pulsed drain current (c) (b) SYMBOL V DSS V GS ID N-channel 40 20 P-channe| -40 20 UNIT V V 5.2 4.1 4.0 I DM IS I SM PD PD PD T j , T stg 24 2.5 24 1.25 10 1.8 14 2.1 17 -55 to +150 -4.7 -3.8 -3.6 -23 2.3 23 A A A A A A W mW/C W mW/C W mW/C C Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25C (a) (d) Linear derating factor Power dissipation at T A =25C (a) (e) Linear derating factor Power dissipation at T A =25C (b) (d) Linear derating factor Operating and storage temperature range THERMAL RESISTANCE PARAMETER Junction to ambient (a) (d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W Junction to ambient (a) (e) Junction to ambient (b) (d) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 2 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 3 SEMICONDUCTORS ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 40 0.5 100 1.0 0.050 0.075 8.6 V A nA V I D = 250 A, V GS =0V V DS =40V, V GS =0V V GS =20V, V DS =0V I D = 250mA, V DS =V GS V GS = 10V, I D = 4.5A V GS = 4.5V, I D = 3.2A S V DS = 15V, I D = 4.5A Ciss Coss Crss 770 92 61 pF pF pF V DS = 40V, V GS =0V f=1MHz Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) td(on) tr td(off) tf Qg Qgs Qgd 3.3 4.7 29 14 17 2.5 3.8 ns ns ns ns nC nC nC V DS = 30V, V GS = 10V I D = 4.5A V DD = 30V, I D = 1A R G 6.0 , V GS = 10V VSD trr Qrr 0.8 20 16 0.95 V ns nC T j =25C, I S = 4.5A, V GS =0V T j =25C, I S = 2.5A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 4 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 5 SEMICONDUCTORS ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 6 ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -40 -1.0 100 -1.0 0.060 0.100 6.8 V A nA V I D = -250 A, V GS =0V V DS = -40V, V GS =0V V GS =20V, V DS =0V ID = -250 A, VDS =VGS VGS = -10V, ID = -3.8A V GS = -4.5V, ID = -2.9A S VDS = -15V, ID = -3.8A C iss C oss C rss 1000 180 160 pF pF pF V DS = -20V, V GS =0V f=1MHz Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.7 5.5 33 18 15 ns ns ns ns nC V DS = -20V, V GS = -5V I D = -3.8A V DD = -20V, I D = -1A R G 6.0 , V GS = 10V Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 26 3.2 7.3 nC nC nC VDS= -20V, VGS= -10V I D = -3.8A V SD t rr Q rr -0.86 27 25 -0.95 V ns nC T j =25C, I S = -3.4A, V GS =0V T j =25C, I S = -3A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - NOVEMBER 2004 7 SEMICONDUCTORS ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 8 ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 9 SEMICONDUCTORS ZXMC4A16DN8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 10 SCXXXX####DS# |
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